elektronische bauelemente 2SC3279 2a , 30v npn plastic encapsulated transistor 18-feb-2011 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c e k f d b g h j 3 base 1 emitter collector 2 rohs compliant product a suffix of -c specifies halogen & lead-free features high dc current gain and excellent h fe linearity. low saturation voltage. classification of h fe product-rank 2SC3279-l 2SC3279-m 2SC3279-n 2SC3279-p range 140~240 200~330 300~450 420~600 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 30 v collector to emitter voltage v ceo 10 v emitter to base voltage v ebo 6 v collector current - continuous i c 2 a collector power dissipation p c 0.75 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo 30 - - v i c =1ma, i e =0 collector to emitter breakdown voltage v (br)ceo 10 - - v i c =10ma, i b =0 emitter to base breakdown voltage v (br)ebo 6 - - v i e =1ma, i c =0 collector cut C off current i cbo - - 0.1 a v cb =30v, i e =0 emitter cut C off current i ebo - - 0.1 a v eb =6v, i c =0 dc current gain h fe 140 - 600 v ce =1v, i c =500ma collector to emitter saturation voltage v ce(sat) - - 0.82 v i c =2a, i b =100ma base to emitter voltage v be - - 1.5 v v ce =1v, i c =2a collector output capacitance c ob - 27 - pf v cb =10v, i e =0, f=1mhz transition frequency f t - 150 - mhz v ce =1v, i c =0.5a 1 11 1 emitter 2 22 2 collector 3 33 3 base to-92 millimeter ref. min. max. a 4.40 4.70 b 4.30 4.70 c 12.70 - d 3.30 3.81 e 0.36 0.56 f 0.36 0.51 g 1.27 typ. h 1.10 - j 2.42 2.66 k 0.36 0.76
elektronische bauelemente 2SC3279 2a , 30v npn plastic encapsulated transistor 18-feb-2011 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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